| PART |
Description |
Maker |
| PS9402-15 |
2.5 A OUTPUT CURRENT, HIGH CMR, IGBT, POWER MOS FET GATE DRIVE, 16-PIN SSOP PHOTOCOUPLER
|
Renesas Electronics Corporation
|
| APT5014B2LC APT5014LLC APT5014 |
POWER MOS VI 500V 37A 0.140 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| APT11GP60K APT11GP60SA |
MOSFET
POWER MOS 7 IGBT
41 A, 600 V, N-CHANNEL IGBT, TO-263AB
|
Advanced Power Technolo...
Advanced Power Technology
MICROSEMI POWER PRODUCTS GROUP
|
| 8810A |
N-channel power MOS field effect tube
|
SHENZHEN FUMAN ELECTRON...
|
| APT45GP120B2DQ2 APT45GP120B2DQ2G |
113 A, 1200 V, N-CHANNEL IGBT
POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
| M57161L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
HYBRID IC FOR DRIVING TRENCH-GATE IGBT
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| APT10025JLC |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
POWER MOS VI 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| GT5J301 GT5J301_07 GT5J30107 |
GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
N CHANNEL IGBT (HIGH POWER SWITCHING MOTOR CONTROL APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| APT35GP120BG |
POWER MOS 7? IGBT
|
Microsemi Corporation
|
| APT15GP90BDQ1G APT15GP90BDQ1 |
POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
| APT65GP60JDQ2 |
POWER MOS 7 IGBT
|
http://
Advanced Power Technology
|
